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| Silicon Schottky Diodes General-purpose diodes for high-speed switching q Circuit protection q Voltage clamping q High-level detecting and mixing Available with CECC quality assessment q BAS 70 ... ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 70 BAS 70-04 Marking 73s 74s Ordering Code Pin Configuration (tape and reel) Q62702-A118 Q62702-A730 Package1) SOT-23 BAS 70-05 75s Q62702-A711 BAS 70-06 76s Q62702-A774 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 01.97 BAS 70 ... General-purpose diodes for high-speed switching q Circuit protection q Voltage clamping q High-level detecting and mixing Available with CECC quality assessment q ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 70-07 Marking 77s Ordering Code Pin Configuration (tape and reel) Q62702-A846 Package1) SOT-143 Maximum Ratings per Diode Parameter Reverse voltage Forward current Surge forward current, t 10 ms Total power dissipation BAS 70 TS 66 C2) BAS 70-04 ... TS 40 C2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 ... Junction - soldering point BAS 70 BAS 70-04 ... Rth JA Symbol VR IF IFSM Ptot Values 70 70 100 250 Unit V mA mW Tj Top Tstg 150 - 55 ... + 150 - 55 ... + 150 C K/W 405 575 335 435 Rth JS 1) 2) 3) For detailed information see chapter Package Outlines. Max. 450 mW per package. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BAS 70 ... Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage IR = 10 A Reverse current VR = 50 V VR = 70 V Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA Diode capacitance VR = 0, f = 1 MHz Charge carrier life time IF = 25 mA Differential forward resistance IF = 10 mA, f = 10 kHz V(BR) IR - - VF - - - CT rf - - - 375 705 880 1.6 - 30 410 750 1000 2 100 - pF ps - - 0.1 10 mV 70 - - V A Values typ. max. Unit Semiconductor Group 3 BAS 70 ... Characteristics per Diode at Tj = 25 C, unless otherwise specified. Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) f= 1 MHz Differential forward resistance rf = f (IF) f= 10 kHz Semiconductor Group 4 BAS 70 ... Forward current IF = f (TA*; TS) * Package mounted on epoxy Semiconductor Group 5 |
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